Boyko T.D. - Publications list

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TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR_{3- X}(N_{1- X}O_X)₄

Article

Boyko T.D., Zerr A., Moewes A.

ACS Applied Electronic Materials. Vol. 3. 2021. P.. 4768-4773

DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN₂

Article

De Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D.

Journal of Physical Chemistry C. Vol. 125. 2021. P.. 27959-27965

BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN₂ DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY

Article

De Boer T., Boyko T.D., Moewes A., Braun C., Schnick W.

Physica Status Solidi. Rapid Research Letters. Vol. 9. 2015. P.. 250-254

INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL₃N₄]: EU²⁺-EXPERIMENT AND CALCULATIONS

Article

Tolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W.

Advanced Optical Materials. Vol. 3. 2015. P.. 546-550

THE LOCAL CRYSTAL STRUCTURE AND ELECTRONIC BAND GAP OF Β-SIALONS

Article

Boyko T.D., Moewes A., Gross T., Schwarz M., Fuess H.

Journal of Materials Science. Vol. 49. 2014. P.. 3242-3252

ELECTRONIC BAND GAP REDUCTION IN MANGANESE CARBODIIMIDE: MNNCN

Article

Boyko T.D., Green R.J., Moewes A., Dronskowski R.

Journal of Physical Chemistry C. Vol. 117. 2013. P.. 12754-12761

ELECTRONIC STRUCTURE OF SPINEL-TYPE NITRIDE COMPOUNDS SI3N 4, GE3N4, AND SN3N4 WITH TUNABLE BAND GAPS: APPLICATION TO LIGHT EMITTING DIODES

Article

Boyko T.D., Hunt A., Moewes A., Zerr A.

Physical Review Letters. Vol. 111. 2013. 097402 p..

SELECTIVE RESPONSE OF MESOPOROUS SILICON TO ADSORBANTS WITH NITRO GROUPS

Article

Mcleod J.A., Boyko T.D., Moewes A., Kurmaev E.Z., Sushko P.V., Levitsky I.A.

Chemistry - A European Journal. Vol. 18. 2012. P.. 2912-2922

STRUCTURAL AND BAND GAP INVESTIGATION OF GAN:ZNO HETEROJUNCTION SOLID SOLUTION PHOTOCATALYST PROBED BY SOFT X-RAY SPECTROSCOPY

Article

Mcdermott E.J., Boyko T.D., Green R.J., Moewes A., Kurmaev E.Z., Finkelstein L.D., Maeda K., Domen K.

Journal of Physical Chemistry C. Vol. 116. 2012. P.. 7694-7700

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE₂AS₂

Article

Mcleod J.A., Green R.J., Boyko T.D., Moewes A., Buling A., Neumann M., Skorikov N.A., Kurmaev E.Z., Finkelstein L.D., Ni N., Thaler A., Budko S.L., Canfield P.C.

Journal of Physics Condensed Matter. Vol. 24. 2012. 215501 p..

EPOXIDE SPECIATION AND FUNCTIONAL GROUP DISTRIBUTION IN GRAPHENE OXIDE PAPER-LIKE MATERIALS

Article

Hunt A., Boyko T.D., Bazylewski P., Chang G.S., Moewes A., Dikin D.A., Kurmaev E.Z.

Advanced Functional Materials. Vol. 22. 2012. P.. 3950-3957

CA₃N₂ AND MG₃N₂: UNPREDICTED HIGH-PRESSURE BEHAVIOR OF BINARY NITRIDES

Article

Braun C., Börger S.L., Schnick W., Boyko T.D., Moewes A., Miehe G., Ehrenberg H., Höhn P.

Journal of the American Chemical Society. Vol. 133. 2011. P.. 4307-4315

ANION ORDERING IN SPINEL-TYPE GALLIUM OXONITRIDE

Article

Boyko T.D., Moewes A., Zvoriste C.E., Riedel R., Kinski I., Hering S., Huppertz H.

Physical Review B: Condensed Matter and Materials Physics (с 1998 по 2015 год). Vol. 84. 2011. 085203 p..

CLASS OF TUNABLE WIDE BAND GAP SEMICONDUCTORS Γ- (GE_X SI_1-X) 3 N₄

Article

Boyko T.D., Moewes A., Bailey E., Mcmillan P.F.

Physical Review B: Condensed Matter and Materials Physics (с 1998 по 2015 год). Vol. 81. 2010. 155207 p..

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Other authors

Ketkov S.Y.

Records: 1

Yip D.

Records: 1