Взаимодействие мировых цивилизаций: история и современность. 2013. P.. 88-96
Electronic structure of spinel-type nitride compounds Si3N 4, Ge3N4, and Sn3N4 with tunable band gaps: Application to light emitting diodes
Authors
Journal
Issue number
9
Language
English
Pages
097402
State
Published
Volume
111
Year
2013
Organizations
- 1 Department of Physics and Engineering Physics|University of Saskatchewan
- 2 LSPM-CNRS|Université Paris-Nord
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ПРЕДИСЛОВИЕ
Article
1150 лет российской государственности. 2013. P.. 3-4