Class of tunable wide band gap semiconductors γ- (Gex Si1-x) 3 N4

Boyko, T.D.; Moewes, A.; Bailey, E.; McMillan, P.F.

Authors

Boyko T.D. ¹ , Moewes A. ¹ , Bailey E. ² , Mcmillan P.F. ²

Journal

Physical Review B: Condensed Matter and Materials Physics (с 1998 по 2015 год)

Publisher

American Physical Society

Issue number

Language

English

Pages

155207

State

Published

Volume

Year

2010

Organizations

¹ Department of Physics and Engineering Physics|University of Saskatchewan
² Department of Chemistry|University College London

Cite

ГОСТ MLA RIS BibTex

MEASUREMENT OF THE INCOHERENT Γ D → Φ{SYMBOL} P N PHOTOPRODUCTION NEAR THRESHOLD

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Class of tunable wide band gap semiconductors γ- (Ge_x Si_1-x) 3 N₄

Other records

MEASUREMENT OF THE INCOHERENT Γ D → Φ{SYMBOL} P N PHOTOPRODUCTION NEAR THRESHOLD

NEW SYSTEMIC TREATMENT OPTIONS FOR METASTATIC RENAL-CELL CARCINOMA IN THE ERA OF TARGETED THERAPIES