Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation

The numerical impact modeling of some external effects on devices based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes in the heterostructure in the buffer region and to start the process of directed construction optimization of the devices based on AlGaN/GaN HEMT with the aim of improving their performances. © Published under licence by IOP Publishing Ltd.