Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation

The numerical impact modeling of some external effects on devices based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes in the heterostructure in the buffer region and to start the process of directed construction optimization of the devices based on AlGaN/GaN HEMT with the aim of improving their performances. © Published under licence by IOP Publishing Ltd.

Авторы
Tikhomirov V.G.1, 2 , Gudkov A.G.3 , Agasieva S.V. 4, 5 , Dynaiev D.D.2 , Popov M.K.1 , Chizhikov S.V.3
Редакторы
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Сборник материалов конференции
Издательство
Institute of Physics Publishing
Номер выпуска
1
Язык
Английский
Страницы
-
Статус
Опубликовано
Подразделение
-
Ссылка
-
Номер
012191
Том
1410
Год
2019
Организации
  • 1 Saint-Petersburg State Electrotechnical University LETI, St. Petersburg, 197376, Russian Federation
  • 2 Closed Joint Stock Company Svetlana-Electronpribor, St. Petersburg, 194156, Russian Federation
  • 3 Bauman Moscow State Technical University, Moscow, 105005, Russian Federation
  • 4 Peoples Friendship University of Russia, Moscow, 117198, Russian Federation
  • 5 Microwave Radiometry Global Excellence Ltd., Moscow, 115201, Russian Federation
Ключевые слова
Aluminum gallium nitride; Drain current; High electron mobility transistors; III-V semiconductors; Nanostructures; Optoelectronic devices; Photonics; AlGaN/GaN HEMTs; AlGaN/GaN heterostructures; Buffer region; Construction optimization; Gan hemt transistors; Impact model; Gallium nitride
Дата создания
10.02.2020
Дата изменения
10.02.2020
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/56267/