EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL PROPERTIES OF INGAALP AND INGAP ArticlePolyakov A.Y., Chelniy A.A., Govorkov A.V., Smirnov N.B., Milnes A.G., Pearton S.J., Wilson R.G., Balmashnov A.A., Aluev A.N., Markov A.V.Solid State Electronics. Том 38. 1995. С. 1131-1135
HYDROGEN AND NITROGEN PLASMA TREATMENT EFFECTS ON SURFACE PROPERTIES OF GASB AND INGAASSB ArticlePolyakov A.Y., Milnes A.G., Li X., Balmashnov A.A., Smirnov N.B.Solid State Electronics. Том 38. 1995. С. 1743-1745
THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP ArticlePolyakov A.Y., Smirnov N.B., Chelniy A.A., Balmashnov A.A., Milnes A.G., Pearton S.J.Solid State Electronics. Том 38. 1995. С. 771-774