Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP

It is shown that both acceptors and donors can be passivated by hydrogen in InGaP and InGaAlP and that high-resistivity (about 103 Ω cm) layers of p-InGaAlP and of p-InGaP can be prepared by hydrogen plasma treatment at 250°C. Proton implantation with energy 100 keV is shown to create high-resistivity layers (104-105 Ω cm) both in n and in type InGaP and InGaAlP. © 1995.

Authors
Polyakov A.Y.1 , Chelniy A.A.2 , Govorkov A.V.1 , Smirnov N.B.1 , Milnes A.G.3 , Pearton S.J.4 , Wilson R.G.5 , Balmashnov A.A.6 , Aluev A.N.2 , Markov A.V.1
Journal
Solid State Electronics
Number of issue
6
Language
English
Pages
1131-1135
Status
Published
Link
External link
DOI
10.1016/0038-1101(94)00228-8
Volume
38
Year
1995
Organizations
  • 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
  • 2 Sigma Plus Company, Vinogradov str. 8 /75, Moscow, 117133, Russian Federation
  • 3 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 4 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
  • 5 Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265, United States
  • 6 Russian Friendship University, Miklukho- Maklay str. 6, Moscow, 117198, Russian Federation
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/919/
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