The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP

It is shown that hydrogen plasma treatment leads to a considerable (an order of magnitude or more) decrease in reverse currents of Schottky diodes and mesa diodes on InGaAlP and InGaP. The efficiency of this process is higher when the treatment is done in a crossed-beams plasma source minimizing surface damage. © 1995.

Authors
Polyakov A.Y.1 , Smirnov N.B.1 , Chelniy A.A.2 , Balmashnov A.A.3 , Milnes A.G.4 , Pearton S.J.5
Editors
-
Publisher
-
Number of issue
4
Language
English
Pages
771-774
Status
Published
Department
-
Number
-
Volume
38
Year
1995
Organizations
  • 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
  • 2 Sigma Plus Company, Vinogradov str. 8 /75, Moscow, 117133, Russian Federation
  • 3 Russian Friendship University, Miklukho- Maklay str. 6, Moscow, 117198, Russian Federation
  • 4 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 5 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
Keywords
Carrier concentration; Defects; Efficiency; Electric currents; Evaporation; Heterojunctions; Plasma sources; Schottky barrier diodes; Semiconductor plasmas; Semiconductor quantum wells; Surfaces; Hydrogen plasma treatment; Reverse currents; Surface damage; Semiconducting indium compounds
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/917/