THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP Статья Polyakov A.Y., Smirnov N.B., Chelniy A.A., Balmashnov A.A., Milnes A.G., Pearton S.J. Solid State Electronics. Том 38. 1995. С. 771-774
EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL PROPERTIES OF INGAALP AND INGAP Статья Polyakov A.Y., Chelniy A.A., Govorkov A.V., Smirnov N.B., Milnes A.G., Pearton S.J., Wilson R.G., Balmashnov A.A., Aluev A.N., Markov A.V. Solid State Electronics. Том 38. 1995. С. 1131-1135
HYDROGEN AND NITROGEN PLASMA TREATMENT EFFECTS ON SURFACE PROPERTIES OF GASB AND INGAASSB Статья Polyakov A.Y., Milnes A.G., Li X., Balmashnov A.A., Smirnov N.B. Solid State Electronics. Том 38. 1995. С. 1743-1745