The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP

It is shown that hydrogen plasma treatment leads to a considerable (an order of magnitude or more) decrease in reverse currents of Schottky diodes and mesa diodes on InGaAlP and InGaP. The efficiency of this process is higher when the treatment is done in a crossed-beams plasma source minimizing surface damage. © 1995.

Авторы
Polyakov A.Y.1 , Smirnov N.B.1 , Chelniy A.A.2 , Balmashnov A.A.3 , Milnes A.G.4 , Pearton S.J.5
Редакторы
-
Издательство
-
Номер выпуска
4
Язык
Английский
Страницы
771-774
Статус
Опубликовано
Подразделение
-
Номер
-
Том
38
Год
1995
Организации
  • 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
  • 2 Sigma Plus Company, Vinogradov str. 8 /75, Moscow, 117133, Russian Federation
  • 3 Russian Friendship University, Miklukho- Maklay str. 6, Moscow, 117198, Russian Federation
  • 4 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 5 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
Ключевые слова
Carrier concentration; Defects; Efficiency; Electric currents; Evaporation; Heterojunctions; Plasma sources; Schottky barrier diodes; Semiconductor plasmas; Semiconductor quantum wells; Surfaces; Hydrogen plasma treatment; Reverse currents; Surface damage; Semiconducting indium compounds
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/917/