Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP

It is shown that both acceptors and donors can be passivated by hydrogen in InGaP and InGaAlP and that high-resistivity (about 103 Ω cm) layers of p-InGaAlP and of p-InGaP can be prepared by hydrogen plasma treatment at 250°C. Proton implantation with energy 100 keV is shown to create high-resistivity layers (104-105 Ω cm) both in n and in type InGaP and InGaAlP. © 1995.

Авторы
Polyakov A.Y.1 , Chelniy A.A.2 , Govorkov A.V.1 , Smirnov N.B.1 , Milnes A.G.3 , Pearton S.J.4 , Wilson R.G.5 , Balmashnov A.A.6 , Aluev A.N.2 , Markov A.V.1
Журнал
Solid State Electronics
Номер выпуска
6
Язык
Английский
Страницы
1131-1135
Статус
Опубликовано
Ссылка
Внешняя ссылка
DOI
10.1016/0038-1101(94)00228-8
Том
38
Год
1995
Организации
  • 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
  • 2 Sigma Plus Company, Vinogradov str. 8 /75, Moscow, 117133, Russian Federation
  • 3 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 4 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
  • 5 Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265, United States
  • 6 Russian Friendship University, Miklukho- Maklay str. 6, Moscow, 117198, Russian Federation
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