Mechanism of oxygen release on a passive metal

Model notions of oxygen release on a passivated metal surface are reported. The passive region and the transpassive transition region are considered. The roles played by ion transport in the lattice of the oxide passivating layer and the semiconductor properties of the layer in the mechanism of oxygen release are discussed.

Авторы
Popov Yu.A.1 , Stepnykh S.A. 2 , Salomasova M.A. 2
Редакторы
-
Издательство
-
Номер выпуска
2
Язык
Английский
Страницы
325-327
Статус
Опубликовано
Подразделение
-
DOI
-
Номер
-
Том
77
Год
2003
Организации
  • 1 Stt. Sci. Ctr. of the Russ. Fed., Karpov Res. Inst. of Phys. Chemistry, ul. Vorontsovo pole 10, Moscow 103064, Russian Federation
  • 2 University of Peoples' Friendship, ul. Miklukho-Maklaya 6, Moscow 117198, Russian Federation
Ключевые слова
metal; oxygen; transition element; article; chemical model; ion transport; regulatory mechanism; semiconductor
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/83/