Mechanism of oxygen release on a passive metal

Model notions of oxygen release on a passivated metal surface are reported. The passive region and the transpassive transition region are considered. The roles played by ion transport in the lattice of the oxide passivating layer and the semiconductor properties of the layer in the mechanism of oxygen release are discussed.

Authors
Popov Yu.A.1 , Stepnykh S.A. 2 , Salomasova M.A. 2
Journal
Russian Journal of Physical Chemistry A
Number of issue
2
Language
English
Pages
325-327
Status
Published
Link
External link
Volume
77
Year
2003
Organizations
  • 1 Stt. Sci. Ctr. of the Russ. Fed., Karpov Res. Inst. of Phys. Chemistry, ul. Vorontsovo pole 10, Moscow 103064, Russian Federation
  • 2 University of Peoples' Friendship, ul. Miklukho-Maklaya 6, Moscow 117198, Russian Federation
Keywords
metal; oxygen; transition element; article; chemical model; ion transport; regulatory mechanism; semiconductor
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/83/
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