ANNEALING EFFECT ON THE ELECTRONIC STRUCTURE AND MAGNETIC PROPERTIES OF MN-DOPED ZNO FILMS СтатьяJin J., Zhang X.Y., Zhou Y.X., Chang G.S.Semiconductor Science and Technology. Том 27. 2012. 035012 с.
PASSIVATION OF GAAS BY ATOMIC HYDROGEN FLOW PRODUCED BY THE CROSSED BEAMS METHOD СтатьяBalmashnov A.A., Golovanivsky K.S., Omeljanovsky E.M., Pakhomov A.V., Polyakov A.Y.Semiconductor Science and Technology. Том 5. 1990. С. 242-245