Passivation of GaAs by atomic hydrogen flow produced by the crossed beams method

A new method of hydrogen passivation is described in which a flow of molecular hydrogen is passed through dense microwave plasma across a magnetic field. This magnetic field serves to protect the sample surface from being bombarded by charged particles. Hence the crossed beam (CB) method makes it possible to avoid plasma etching and heavy ion bombardment that are so detrimental for many semiconductor devices. The positive effect of CB treatment on n-GaAs Schottky diodes is described. The effect consists of shallow donor passivation and improvement of I-V characteristics.

Авторы
Balmashnov A.A. 1 , Golovanivsky K.S. 1 , Omeljanovsky E.M.2 , Pakhomov A.V.2 , Polyakov A.Y.2
Редакторы
-
Издательство
-
Номер выпуска
3
Язык
Английский
Страницы
242-245
Статус
Опубликовано
Подразделение
-
Номер
010
Том
5
Год
1990
Организации
  • 1 People's Friendship University, M Maklay st., 6, Moscow 117198, Russian Federation
  • 2 State Institute of Rare Metals, B Tolmatchevsky 5, Moscow 109017, Russian Federation
Ключевые слова
Atomic Hydrogen; Crossed Beams Method; Hydrogen Passivation; Ion Bombardment; Molecular Hydrogen; Schottky Diodes; Hydrogen; Plasmas--Microwaves; Semiconductor Diodes; Semiconducting Gallium Arsenide
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/1124/