TIME-RESOLVED EVOLUTION OF PLASMA PARAMETERS IN A PLASMA IMMERSION ION IMPLANTATION SOURCE Статья Moreno J., Khodaee A., Okerstrom D., Bradley M.P., Couëdel L. Physics of Plasmas. Том 28. 2021. 123523 с.
CHARGED PARTICLE RADIATION INDUCED CHANGES TO OPTICAL PROPERTIES OF ACOUSTO-OPTIC MATERIALS Статья Taylor B.J., Bourassa A.E., Bradley M.P. Applied Optics. Том 59. 2020. С. 3706-3713
EFFECTS OF X-RAY IRRADIATION ON CHARGE TRANSPORT AND CHARGE COLLECTION EFFICIENCY IN STABILIZED A-SE PHOTOCONDUCTORS Статья Kasap S.O., Yang J., Simonson B., Adeagbo E., Walornyj M., Belev G., Johanson R.E., Bradley M.P. Journal of Applied Physics. Том 127. 2020. 084502 с.
OPTIMAL PARAMETER(S) FOR THE SYNTHESIS OF NITROGEN-VACANCY (NV) CENTRES IN POLYCRYSTALLINE DIAMONDS AT LOW PRESSURE Статья Ejalonibu H.A., Sarty G.E., Bradley M.P. Journal of Materials Science: Materials in Electronics. Springer New York LLC. Том 30. 2019. С. 10369-10382
NANOSCALE IMAGING OF FREESTANDING NITROGEN DOPED SINGLE LAYER GRAPHENE Статья Iyer G.R.S., Wang J., Wells G., Borondics F., Bradley M.P. Nanoscale. Royal Society of Chemistry. Том 7. 2015. С. 2289-2294
LIGHT-EMITTING DIODES FABRICATED FROM CARBON IONS IMPLANTED INTO P-TYPE SILICON Статья Purdy S.K., Bradley M.P., Chang G.S., Knights A.P. IEEE Transactions on Electron Devices. Institute of Electrical and Electronics Engineers. Том 62. 2015. С. 914-918
CHEMICAL REACTIONS AND APPLICATIONS OF THE REDUCTIVE SURFACE OF POROUS SILICON Статья Maley J.M., Sammynaiken R., Sham T.K., Hirose A., Bradley M.P., Yang Q. Journal of Nanoscience and Nanotechnology. American Scientific Publishers. Том 10. 2010. С. 6332-6339
PROSPECTS FOR BAND GAP ENGINEERING BY PLASMA ION IMPLANTATION Статья Risch M., Bradley M.P. Physica Status Solidi (C) Current Topics in Solid State Physics. John Wiley & Sons. Том 6. 2009. С. S210-S213
ELECTROLUMINESCENCE IN PLASMA ION IMPLANTED SILICON Статья Desautels P.R., Bradley M.P., Mantyka J., Steenkamp J.T. Physica Status Solidi (A) Applications and Materials Science. Wiley-VCH Verlag. Том 206. 2009. С. 985-988