BULK VS. SURFACE STRUCTURE OF 3D METAL IMPURITIES IN TOPOLOGICAL INSULATOR BI<SUB>2</SUB>TE<SUB>3</SUB> Статья Leedahl B., Moewes A., Boukhvalov D.W., Kurmaev E.Z., Kukharenko A., Zhidkov I.S., Cholakh S.O., Gavrilov N.V., Le P.H., Luo C.W. Scientific Reports. Nature Publishing Group. Том 7. 2017. 5758 с.
SELECTIVE AREA BAND ENGINEERING OF GRAPHENE USING COBALT-MEDIATED OXIDATION Статья Bazylewski P.F., Bauer R.P.C., Hunt A.H., Leedahl B.D., Moewes A., Chang G.S., Nguyen V.L., Lee Y.H., McDermott E.J.G., Blaha P., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O. Scientific Reports. Nature Publishing Group. Том 5. 2015. 15380 с.
PRONOUNCED, REVERSIBLE, AND IN SITU MODIFICATION OF THE ELECTRONIC STRUCTURE OF GRAPHENE OXIDE VIA BUCKLING BELOW 160 K Статья Hunt A., McDermott E., Moewes A., Kurmaev E.Z. Journal of Physical Chemistry Letters. American Chemical Society. Том 6. 2015. С. 3163-3169
ELECTRONIC STRUCTURE OF LI2 RUO3 STUDIED BY LDA AND LDA+DMFT CALCULATIONS AND SOFT X-RAY SPECTROSCOPY Статья Pchelkina Z.V., Kurmaev E.Z., Streltsov S.V., Pitman A.L., Moewes A., Tan T.Y., Peets D.C., Park J.G. Physical Review B - Condensed Matter and Materials Physics. Том 91. 2015. 115138 с.
LINKING THE HOMO-LUMO GAP TO TORSIONAL DISORDER IN P3HT/PCBM BLENDS Статья McLeod J.A., Pitman A.L., Moewes A., Kurmaev E.Z., Finkelstein L.D., Zhidkov I.S., Savva A. The Journal of Chemical Physics. Том 143. 2015. 224704 с.
STABILITY AND ELECTRONIC CHARACTERISTICS OF EPITAXIAL SILICENE MULTILAYERS ON AG(111) Статья Johnson N.W., Moewes A., Muir D., Kurmaev E.Z. Advanced Functional Materials. Wiley-VCH Verlag. Том 25. 2015. С. 4083-4090
BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN<SUB>2</SUB> DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY Статья De Boer T., Boyko T.D., Moewes A., Braun C., Schnick W. Physica Status Solidi. Rapid Research Letters. John Wiley & Sons. Том 9. 2015. С. 250-254
ELECTRONIC STRUCTURE AND SPIN TRAPPING IN LIMNAS AND LIFEAS:MN Статья McLeod J.A., Perez I., Green R.J., Moewes A., Kurmaev E.Z., Xing L.Y., Wang X.C., Jin C.Q. Journal of Physics Condensed Matter. Том 27. 2015. 015504 с.
INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL<SUB>3</SUB>N<SUB>4</SUB>]: EU<SUP>2+</SUP>-EXPERIMENT AND CALCULATIONS Статья Tolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W. Advanced Optical Materials. Wiley-VCH GmbH. Том 3. 2015. С. 546-550
ADJACENT FE-VACANCY INTERACTIONS AS THE ORIGIN OF ROOM TEMPERATURE FERROMAGNETISM IN (IN1-XFEX)2 O3 Статья Green R.J., Leedahl B., McLeod J.A., Chang G.S., Moewes A., Regier T.Z., Xu X.H., Kurmaev E.Z. Physical Review Letters. Том 115. 2015. 167401 с.
THE ELECTRONIC STRUCTURE OF ZIRCONIUM IN HYDRIDED AND OXIDIZED STATES Статья Akhiani H., Szpunar J., Hunt A., Moewes A., Cui X. Journal of Alloys and Compounds. Elsevier Ltd. Том 622. 2014. С. 463-470
A RE-EVALUATION OF HOW FUNCTIONAL GROUPS MODIFY THE ELECTRONIC STRUCTURE OF GRAPHENE OXIDE Статья Hunt A., Moewes A., Kurmaev E.Z. Advanced Materials. Wiley - VCH Verlag GmbH & CO. KGaA. Том 26. 2014. С. 4870-4874
BAND GAP ENGINEERING OF GRAPHENE OXIDE BY CHEMICAL MODIFICATION Статья Hunt A., Moewes A., Kurmaev E.Z. Carbon. Elsevier Ltd. Том 75. 2014. С. 366-371
ELECTRONIC STRUCTURE OF CO-SUBSTITUTED FESE SUPERCONDUCTOR PROBED BY SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY Статья Perez I., McLeod J.A., Green R.J., Moewes A., Escamilla R., Ortiz V. Physical Review B - Condensed Matter and Materials Physics. Том 90. 2014. 014510 с.
LOCAL STRUCTURE OF FE IMPURITY ATOMS IN ZNO: BULK VERSUS SURFACE Статья McLeod J.A., Green R.J., Leedahl B., Moewes A., Boukhvalov D.W., Zatsepin D.A., Kurmaev E.Z., Zhidkov I.S., Finkelstein L.D., Cholakh S.O., Cui L., Gavrilov N.V. Journal of Physical Chemistry C. Том 118. 2014. С. 5336-5345
ELECTRONIC STRUCTURE OF FESE1-XTEX STUDIED BY X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY Статья Perez I., McLeod J.A., Green R.J., Moewes A., Escamilla R., Ortiz V. Journal of Physical Chemistry C. Том 118. 2014. С. 25150-25157
STUDY OF THE STRUCTURAL CHARACTERISTICS OF 3D METALS CR, MN, FE, CO, NI, AND CU IMPLANTED IN ZNO AND TIO2-EXPERIMENT AND THEORY Статья Leedahl B., Green R.J., Moewes A., Zatsepin D.A., Zhidkov I.S., Cholakh S.O., Boukhvalov D.W., Kurmaev E.Z., Kim S.S., Cui L., Gavrilov N.V. Journal of Physical Chemistry C. Том 118. 2014. С. 28143-28151
STRUCTURAL DEFECTS INDUCED BY FE-ION IMPLANTATION IN TIO2 Статья Leedahl B., Green R.J., McLeod J.A., Moewes A., Zatsepin D.A., Zhidkov I.S., Cholakh S.O., Boukhvalov D.W., Kim S.S., Kurmaev E.Z., Gavrilov N.V. Journal of Applied Physics. Том 115. 2014. 053711 с.
MODULATION OF THE BAND GAP OF GRAPHENE OXIDE: THE ROLE OF AA-STACKING Статья Hunt A., Chang G.S., Moewes A., Dikin D.A., Lee Y.H., Luan N.V., Kurmaev E.Z. Carbon. Elsevier Ltd. Том 66. 2014. С. 539-546
THE LOCAL CRYSTAL STRUCTURE AND ELECTRONIC BAND GAP OF Β-SIALONS Статья Boyko T.D., Moewes A., Gross T., Schwarz M., Fuess H. Journal of Materials Science. Springer. Том 49. 2014. С. 3242-3252
ELECTRONIC BAND GAP REDUCTION AND INTENSE LUMINESCENCE IN CO AND MN ION-IMPLANTED SIO<SUB>2</SUB> Статья Green R.J., St. Onge D.J., Moewes A., Zatsepin D.A., Kurmaev E.Z., Gavrilov N.V., Zatsepin A.F. Journal of Applied Physics. Том 115. 2014. 103708 с.
THE FORMATION OF TI-O TETRAHEDRA AND BAND GAP REDUCTION IN SIO<SUB>2</SUB> VIA PULSED ION IMPLANTATION Статья Green R.J., Hunt A., Moewes A., Zatsepin D.A., Kurmaev E.Z., Gavrilov N.V. Journal of Applied Physics. Том 113. 2013. 103704 с.
MAGNESIUM DOUBLE NITRIDE MG<SUB>3</SUB>GAN<SUB>3</SUB> AS NEW HOST LATTICE FOR EU<SUP>2+</SUP> DOPING: SYNTHESIS, STRUCTURAL STUDIES, LUMINESCENCE, AND BAND-GAP DETERMINATION Статья Hintze F., Seibald M., Schnick W., Johnson N.W., Muir D., Moewes A. Chemistry of Materials. American Chemical Society. Том 25. 2013. С. 4044-4052
X-RAY SPECTROSCOPIC STUDY OF THE CONDUCTION BAND OF K<SUB>3</SUB>: ANTHRACENE AND K<SUB>3</SUB>: PHENANTHRENE Статья Pitman A.L., McLeod J.A., Moewes A., Khozeimeh Sarbisheh E., Müller J., Kurmaev E. Journal of Physical Chemistry C. Том 117. 2013. С. 19616-19621
ELECTRONIC STRUCTURE OF SPINEL-TYPE NITRIDE COMPOUNDS SI3N 4, GE3N4, AND SN3N4 WITH TUNABLE BAND GAPS: APPLICATION TO LIGHT EMITTING DIODES Статья Boyko T.D., Hunt A., Moewes A., Zerr A. Physical Review Letters. Том 111. 2013. 097402 с.