THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP Article Polyakov A.Y., Smirnov N.B., Chelniy A.A., Balmashnov A.A., Milnes A.G., Pearton S.J. Solid State Electronics. Vol. 38. 1995. P. 771-774
EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL PROPERTIES OF INGAALP AND INGAP Article Polyakov A.Y., Chelniy A.A., Govorkov A.V., Smirnov N.B., Milnes A.G., Pearton S.J., Wilson R.G., Balmashnov A.A., Aluev A.N., Markov A.V. Solid State Electronics. Vol. 38. 1995. P. 1131-1135
HYDROGEN AND NITROGEN PLASMA TREATMENT EFFECTS ON SURFACE PROPERTIES OF GASB AND INGAASSB Article Polyakov A.Y., Milnes A.G., Li X., Balmashnov A.A., Smirnov N.B. Solid State Electronics. Vol. 38. 1995. P. 1743-1745