Electronic structure of spinel-type nitride compounds Si3N 4, Ge3N4, and Sn3N4 with tunable band gaps: Application to light emitting diodes

Authors
Boyko T.D. 1 , Hunt A. 1 , Moewes A. 1 , Zerr A.2
Journal
Physical Review Letters
Number of issue
9
Language
English
Pages
097402
Status
Published
Volume
111
Year
2013
Organizations
  • 1 Department of Physics and Engineering Physics|University of Saskatchewan
  • 2 LSPM-CNRS|Université Paris-Nord
Date of creation
09.07.2024
Date of change
09.07.2024
Short link
https://repository.rudn.ru/en/records/article/record/138260/
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ПРЕДИСЛОВИЕ

Article
Петров В.Б., Филатова О.В.
1150 лет российской государственности. Российский университет дружбы народов (РУДН). 2013. P. 3-4