The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

It is shown that addition of Gd to the melt during liquid phase epitaxy growth of InGaAsSb layers greatly reduces contamination of the samples with residual donor impurities, such as sulfur and silicon. The effect is related to Gd gettering of these impurities in the melt. © 1994.

Авторы
Dolginov L.M.1 , Tunitskaya I.V.1 , Polyakov A.Y.1 , Druzhinina L.V.1 , Vinogradova G.V.1 , Smirnov N.B.1 , Govorkov A.V.1 , Borodina O.M.1 , Kozhukhova E.A.1 , Balmashnov A.A.2 , Milnes A.G.3
Редакторы
-
Журнал
Издательство
-
Номер выпуска
2
Язык
Английский
Страницы
147-150
Статус
Опубликовано
Подразделение
-
Номер
-
Том
251
Год
1994
Организации
  • 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
  • 2 Russia Friendship University, Mikluho- Maklay str. 6, Moscow, 117198, Russian Federation
  • 3 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
Ключевые слова
Gallium antimode; Indium arsenide; Semiconductors; Sulphur
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/934/