Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring. The morphological and crystallographic features of NPSi structures formed on n-and p-type silicon with low and relatively high resistivity have also been investigated. The proposed scheme allows one to experiment with biological objects (for example, stem cells, neurons, and other objects) in a locally formed porous structure located in close proximity to the electronic periphery of sensor devices on a silicon wafer. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Авторы
Starkov V.V.1 , Gosteva E.A. 2, 3 , Zherebtsov D.D.4, 5 , Chichkov M.V.2 , Alexandrov N.V.2
Журнал
Издательство
MDPI
Номер выпуска
1
Язык
Английский
Статус
Опубликовано
Номер
163
Том
10
Год
2022
Организации
  • 1 Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Ossipyan Str, Chernogolovka, 142432, Russian Federation
  • 2 Department of the Material Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 4 Leninskiy Prospekt, Moscow, 119049, Russian Federation
  • 3 Academy of Engineering, Peoples Friendship University of Russia (RUDN University), 6 Miklukho-Maklaya Str, Moscow, 117198, Russian Federation
  • 4 Laboratory for Microparticle Analysis, Moscow, 117218, Russian Federation
  • 5 Center for Composite Materials, National University of Science and Technology “MISiS”, Moscow, 119049, Russian Federation
Ключевые слова
Nanostructured surface; Nanostructures; Porous nanoparticles; Synthesis strategies
Дата создания
06.07.2022
Дата изменения
06.07.2022
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/84306/
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