Quantum technology applied to alpha-C:H film modeling aspects

The application of quantum technology on alpha-C:H film modeling was discussed. The possibility of atomic-level manipulation on solid surfaces in the field of the tip of a scanning tunnelling microscope (STM) as a formation of nanosize protuberances on the Ge (111) surface was demonstrated. The existence of the local chemical reaction on the alpha-C:H film surface, which was caused by a local character of interatomic interaction, is a consequence of a strongly localized distribution of the electron density over surface atoms of the sp3-component. The results show more feature which is important in the context of further applications.

Авторы
Sheka E.F. 1 , Khavryutchenko V.D.2 , Nikitina E.A. 3
Редакторы
-
Издательство
-
Номер выпуска
4
Язык
Английский
Страницы
298-309
Статус
Опубликовано
Подразделение
-
DOI
-
Номер
-
Том
5
Год
1997
Организации
  • 1 Russian Peoples' Friendship University, ul. Ordgonikidze, 3, 117302 Moscow, Russian Federation
  • 2 Institute of Surface Chemistry, Nat. Ac. Sci. of the Ukraine, pr. Nauki, 31, 252028 Kiev, Ukraine
  • 3 Institute of Applied Mechanics, Russian Ac. Sci., Leninsky pr. 31a, Moscow, Russian Federation
Ключевые слова
Carbon; Carrier concentration; Germanium; Hydrogen; Mathematical models; Nanostructured materials; Reaction kinetics; Scanning tunneling microscopy; Surface phenomena; Thin films; Atomic-manipulation processes; Film modeling; Nanosize protuberances; Quantum technology; Quantum theory
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/717/