Quantum technology applied to alpha-C:H film modeling aspects

The application of quantum technology on alpha-C:H film modeling was discussed. The possibility of atomic-level manipulation on solid surfaces in the field of the tip of a scanning tunnelling microscope (STM) as a formation of nanosize protuberances on the Ge (111) surface was demonstrated. The existence of the local chemical reaction on the alpha-C:H film surface, which was caused by a local character of interatomic interaction, is a consequence of a strongly localized distribution of the electron density over surface atoms of the sp3-component. The results show more feature which is important in the context of further applications.