Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10‒20 μm, electrical resistivity ρ = 0.92 Ω cm at T = 300 K, and bang gap Eg = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is Ra = 2.46 μm. © 2018, Pleiades Publishing, Ltd.

Авторы
Номер выпуска
1
Язык
Английский
Страницы
164-171
Статус
Опубликовано
Том
92
Год
2018
Организации
  • 1 Institute of Biochemical Technology and Nanotechnology, RUDN University, Moscow, 117198, Russian Federation
Ключевые слова
band gap; copper(I) sulfide; electrical resistivity; surface roughness; thin films
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/6954/
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