Electrical Breakdown in Pure n- and p-Si

The results of calculations of the dependences of the kinetic coefficients of impact ionization and thermal recombination on an electric field in pure silicon are presented. By analogy with germanium, the dependences of the breakdown field Еbr on the material compensation ratio K are calculated. The validity of such calculation is justified in detail. The Еbr(K) curves are presented and compared with experimental data in the weak-compensation region. Matching with experimental results at which satisfactory agreement between theory and experiment is observed is performed. © 2018, Pleiades Publishing, Ltd.

Авторы
Bannaya V.F.1 , Nikitina E.V. 2
Редакторы
-
Журнал
Издательство
Pleiades Publishing
Номер выпуска
3
Язык
Английский
Страницы
273-277
Статус
Опубликовано
Подразделение
-
Номер
-
Том
52
Год
2018
Организации
  • 1 Moscow State University of Education, ul. Malaya Pirogovskaya 1/1, Moscow, 119991, Russian Federation
  • 2 Russian Peoples’ Friendship University, ul. Miklukho-Maklaya 6, Moscow, 117198, Russian Federation
Ключевые слова
-
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/6791/