Surface magnetism of silicon [111](7×7) and [001](2×1) surfaces: Quantum-chemical approach

When discussing bare surfaces of silicon crystal, the concept of dangling bonds is widely used. The surface reconstruction is usually explained in terms of a tendency of the bonds to be saturated. However, the current microscopic calculations show that the availability of dangling bonds on the topmost silicon atoms is controversial enough. © 1999 CriMiCo.

Авторы
Sheka E.F. 1 , Nikitina E.A. 1 , Aono M.2
Редакторы
-
Издательство
Institute of Electrical and Electronics Engineers Inc.
Номер выпуска
-
Язык
Английский
Страницы
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Статус
Опубликовано
Подразделение
-
Ссылка
-
Номер
815245
Том
-
Год
1999
Организации
  • 1 Russian Peoples' Friendship University, Moscow, 117923, Russian Federation
  • 2 Institute of Chemical and Physical Research (RIKEN), Japan Department of Precision Science and Technology, Osaka University, Wako-shi, Osaka, Japan
Ключевые слова
Quantum chemistry; Silicon; Quantum chemical approach; Silicon atoms; Silicon crystal; Surface magnetism; Dangling bonds
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/607/