A microstructural study of a quenched InSb ingot

Samples cut from a quenched ingot of the compound semiconductor InSb have been characterized by precision X-ray diffraction. The results show that the central and top parts of the ingot have [110] texture, whereas its bottom part is polycrystalline, which is interpreted in terms of the heat removal geometry during quenching. The texture plane coincides with the easy cleavage plane (110), typical of the III-V compound semiconductors and due to dislocation pile-ups. The microstructure of the quenched InSb ingot includes characteristic microcracks, dotted with dislocation outcrops on the polished surface. The observed increase in the unit-cell parameters of quenched InSb is tentatively attributed to the high dislocation density in the quenched ingot. © 2013 Pleiades Publishing, Ltd.

Авторы
Sanygin V.P.1 , Lobanov N.N. 2 , Pashkova O.N.1 , Izotov A.D.1
Журнал
Номер выпуска
9
Язык
Английский
Страницы
857-861
Статус
Опубликовано
Том
49
Год
2013
Организации
  • 1 Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow 119991, Russian Federation
  • 2 Peoples' Friendship University of Russia, ul. Miklukho-Maklaya 6, Moscow 117198, Russian Federation
Ключевые слова
Cleavage plane; Compound semiconductors; High dislocation density; III-V compound semiconductor; Micro-structural; Polished surfaces; Polycrystalline; Unit-cell parameters; Indium antimonides; Piles; Textures; X ray diffraction; Ingots
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/2019/
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