Development of Nanostructures Based on Nanowires by Shape Memory Alloy Instruments

The article is devoted to solving urgent problems of nanotechnology and physics of nanostructures aimed at developing highly sensitive bionanosensors designed to solve difficult problems of diagnosing biological agents, in particular viruses. The high sensitivity of bionanosensors of biological molecules up to attomolar levels is achieved due to the fact that field-effect nanotransistors have a sensitive element in the form of a nanowire, the transverse size of which is comparable to the size of a bionanoagent, for example, a virus. Taking into account the fact that semiconductor nanowires are an extremely technologically advanced and cheap object, the wide application of such nanosensors based on field-effect transistors is hindered by the lack of only the technology for their manufacture. We have improved the technology of mechanical nanoassembly of structures such as field-effect transistors from suspended semiconductor nanowires. The selection of materials was carried out, and the technology for manufacturing nanostructures based on semiconductor nanowires was developed. © 2023 IEEE.

Авторы
Lega P. , Koledov V. , Vaulinskaya A. , Irzhak A. , Gratowski S.V. , Orlov A.
Издательство
Institute of Electrical and Electronics Engineers Inc.
Язык
Английский
Страницы
80-84
Статус
Опубликовано
Год
2023
Организации
  • 1 Rudn University, Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russian Federation
  • 2 Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow, Russian Federation
  • 3 Bauman Moscow State University, Moscow, Russian Federation
  • 4 Institute of Microelectronics Technology and High-Purity Materials of Russian Academy of Sciences, Chernogolovka, Russian Federation
Ключевые слова
bionanosensors; carbon nanotubes; FIB; nanomanipulation; nanotweezers; nanowires; shape memory effect
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