Interelectronic Scattering in a Model Taking into Account the Parasitic Resistance of a Heterostructure Resonant Tunnel Diode

The contribution of electron-electron interaction to the parasitic resistance of RTDs is considered. Within the framework of the constructed compact model of the current-voltage characteristics of the RTD, the electronic interaction is taken into account by means of additional resistance. Good agreement with experimental results was obtained (Δ<1.6%). The results of the work will improve the efficiency of RTD design methods and assess the reliability of devices based on them. © 2023 IEEE.

Авторы
Vladimirovich K.E. , Alexeevna V.N. , Anatolyevich M.S. , Valentinovna F.N. , Alexandrovna L.L. , Olegovich M.M.
Сборник материалов конференции
Proceedings of the 2023 7th International Conference on Information, Control, and Communication Technologies, ICCT 2023
Издательство
Institute of Electrical and Electronics Engineers Inc.
Язык
Английский
Статус
Опубликовано
DOI
10.1109/ICCT58878.2023.10347095
Год
2023
Организации
  • 1 Bauman Moscow State Technical University, Technologies of Device Making Department, Moscow, Russian Federation
  • 2 Bauman Moscow State Technical University, Rudn University, Technologies of Device Making Department, Basic Department of Nanotechnology and Microsystem Technology, Moscow, Russian Federation
  • 3 Bauman Moscow State Technical University, Physics Department, Moscow, Russian Federation
  • 4 Bauman Moscow State Technical University, Rudn University, Regional Educational and Scientific Center 'Security', Basic Department of Nanotechnology and Microsystem Technology, Moscow, Russian Federation
Ключевые слова
electronic interaction; modeling; parasitic resistance; resonant tunnel diode
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