Oxygen-vacancy-induced ferromagnetism in undoped SnO<sub>2</sub> thin films

Chang, G.S.; Forrest, J.; McLeod, J.A.; Moewes, A.; Kurmaev, E.Z.; Surkova, T.P.; Morozovska, A.N.; Glinchuk, M.D.; Hong, N.H.

Авторы

Chang G.S. ¹ , Forrest J. ¹ , Mcleod J.A. ¹ , Moewes A. ¹ , Kurmaev E.Z. ² , Surkova T.P. ² , Morozovska A.N. ³ , Glinchuk M.D. ³ , Hong N.H. ⁴

Журнал

Physical Review B: Condensed Matter and Materials Physics (с 1998 по 2015 год)

Издательство

American Physical Society

Номер выпуска

Язык

Английский

Страницы

165319

Статус

Опубликовано

Том

Год

2012

Организации

¹ Department of Physics and Engineering Physics|University of Saskatchewan
² Institute of Metal Physics|Russian Academy of Sciences|Ural Division
³ Institute of Problems of Material Sciences|National Academy of Sciences of Ukraine
⁴ Department of Physics and Astronomy|Seoul National University

Цитировать

ГОСТ MLA RIS BibTex

Другие записи

STRUCTURAL ORDERING IN A SILICA GLASS MATRIX UNDER MN ION IMPLANTATION

Статья

Zatsepin D.A., Kurmaev E.Z., Green R.J., Hunt A., Moewes A., Gavrilov N.V.

Journal of Physics Condensed Matter. Том 24. 2012. 185402 с.

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE₂AS₂

Статья

Mcleod J.A., Green R.J., Boyko T.D., Moewes A., Buling A., Neumann M., Skorikov N.A., Kurmaev E.Z., Finkelstein L.D., Ni N., Thaler A., Budko S.L., Canfield P.C.

Journal of Physics Condensed Matter. Том 24. 2012. 215501 с.

Oxygen-vacancy-induced ferromagnetism in undoped SnO2 thin films

Другие записи

STRUCTURAL ORDERING IN A SILICA GLASS MATRIX UNDER MN ION IMPLANTATION

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE2AS2

Цитировать

Oxygen-vacancy-induced ferromagnetism in undoped SnO₂ thin films

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE₂AS₂