Boyko T.D.

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DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN2

Статья

De Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D.

Журнал физической химии С. Том 125. 2021. С. 27959-27965

TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR3- X(N1- XOX)4

Статья

Boyko T.D., Zerr A., Moewes A.

ACS Applied Electronic Materials. ACS Publications. Том 3. 2021. С. 4768-4773

INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL3N4]: EU2+-EXPERIMENT AND CALCULATIONS

Статья

Tolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W.

Advanced Optical Materials. Wiley-VCH GmbH. Том 3. 2015. С. 546-550

BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN2 DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY

Статья

De Boer T., Boyko T.D., Moewes A., Braun C., Schnick W.

Physica Status Solidi. Rapid Research Letters. John Wiley & Sons. Том 9. 2015. С. 250-254

THE LOCAL CRYSTAL STRUCTURE AND ELECTRONIC BAND GAP OF Β-SIALONS

Статья

Boyko T.D., Moewes A., Gross T., Schwarz M., Fuess H.

Journal of Materials Science. Springer. Том 49. 2014. С. 3242-3252

ELECTRONIC STRUCTURE OF SPINEL-TYPE NITRIDE COMPOUNDS SI3N 4, GE3N4, AND SN3N4 WITH TUNABLE BAND GAPS: APPLICATION TO LIGHT EMITTING DIODES

Статья

Boyko T.D., Hunt A., Moewes A., Zerr A.

Physical Review Letters. Том 111. 2013. 097402 с.

ELECTRONIC BAND GAP REDUCTION IN MANGANESE CARBODIIMIDE: MNNCN

Статья

Boyko T.D., Green R.J., Moewes A., Dronskowski R.

Журнал физической химии С. Том 117. 2013. С. 12754-12761

EPOXIDE SPECIATION AND FUNCTIONAL GROUP DISTRIBUTION IN GRAPHENE OXIDE PAPER-LIKE MATERIALS

Статья

Hunt A., Boyko T.D., Bazylewski P., Chang G.S., Moewes A., Dikin D.A., Kurmaev E.Z.

Advanced Functional Materials. Wiley-VCH Verlag. Том 22. 2012. С. 3950-3957

SELECTIVE RESPONSE OF MESOPOROUS SILICON TO ADSORBANTS WITH NITRO GROUPS

Статья

McLeod J.A., Boyko T.D., Moewes A., Kurmaev E.Z., Sushko P.V., Levitsky I.A.

Chemistry - A European Journal. Wiley-VCH Verlag. Том 18. 2012. С. 2912-2922

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE2AS2

Статья

McLeod J.A., Green R.J., Boyko T.D., Moewes A., Buling A., Neumann M., Skorikov N.A., Kurmaev E.Z., Finkelstein L.D., Ni N., Thaler A., Budko S.L., Canfield P.C.

Journal of Physics Condensed Matter. Том 24. 2012. 215501 с.

STRUCTURAL AND BAND GAP INVESTIGATION OF GAN:ZNO HETEROJUNCTION SOLID SOLUTION PHOTOCATALYST PROBED BY SOFT X-RAY SPECTROSCOPY

Статья

McDermott E.J., Boyko T.D., Green R.J., Moewes A., Kurmaev E.Z., Finkelstein L.D., Maeda K., Domen K.

Журнал физической химии С. Том 116. 2012. С. 7694-7700

CA3N2 AND MG3N2: UNPREDICTED HIGH-PRESSURE BEHAVIOR OF BINARY NITRIDES

Статья

Braun C., Börger S.L., Schnick W., Boyko T.D., Moewes A., Miehe G., Ehrenberg H., Höhn P.

Journal of the American Chemical Society. American Chemical Society. Том 133. 2011. С. 4307-4315

ANION ORDERING IN SPINEL-TYPE GALLIUM OXONITRIDE

Статья

Boyko T.D., Moewes A., Zvoriste C.E., Riedel R., Kinski I., Hering S., Huppertz H.

Physical Review B - Condensed Matter and Materials Physics. Том 84. 2011. 085203 с.

CLASS OF TUNABLE WIDE BAND GAP SEMICONDUCTORS Γ- (GEX SI1-X) 3 N4

Статья

Boyko T.D., Moewes A., Bailey E., McMillan P.F.

Physical Review B - Condensed Matter and Materials Physics. Том 81. 2010. 155207 с.

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Другие авторы

Ketkov S.Y.

Записей: 1

Yip D.

Записей: 1

Список записей

DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN<SUB>2</SUB>

TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR<SUB>3- X</SUB>(N<SUB>1- X</SUB>O<SUB>X</SUB>)<SUB>4</SUB>

INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL<SUB>3</SUB>N<SUB>4</SUB>]: EU<SUP>2+</SUP>-EXPERIMENT AND CALCULATIONS

BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN<SUB>2</SUB> DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY

THE LOCAL CRYSTAL STRUCTURE AND ELECTRONIC BAND GAP OF Β-SIALONS

ELECTRONIC STRUCTURE OF SPINEL-TYPE NITRIDE COMPOUNDS SI3N 4, GE3N4, AND SN3N4 WITH TUNABLE BAND GAPS: APPLICATION TO LIGHT EMITTING DIODES

ELECTRONIC BAND GAP REDUCTION IN MANGANESE CARBODIIMIDE: MNNCN

EPOXIDE SPECIATION AND FUNCTIONAL GROUP DISTRIBUTION IN GRAPHENE OXIDE PAPER-LIKE MATERIALS

SELECTIVE RESPONSE OF MESOPOROUS SILICON TO ADSORBANTS WITH NITRO GROUPS

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE<SUB>2</SUB>AS<SUB>2</SUB>

STRUCTURAL AND BAND GAP INVESTIGATION OF GAN:ZNO HETEROJUNCTION SOLID SOLUTION PHOTOCATALYST PROBED BY SOFT X-RAY SPECTROSCOPY

CA<SUB>3</SUB>N<SUB>2</SUB> AND MG<SUB>3</SUB>N<SUB>2</SUB>: UNPREDICTED HIGH-PRESSURE BEHAVIOR OF BINARY NITRIDES

ANION ORDERING IN SPINEL-TYPE GALLIUM OXONITRIDE

CLASS OF TUNABLE WIDE BAND GAP SEMICONDUCTORS Γ- (GE<SUB>X</SUB> SI<SUB>1-X</SUB>) 3 N<SUB>4</SUB>

Другие авторы

Ketkov S.Y.

Yip D.