ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN2O3 СтатьяHo J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.Journal of Materials Science: Materials in Electronics. Том 30. 2019. С. 14091-14098
ENERGY BAND GAPS AND EXCITED STATES IN SI QD/SIOX/RY OZ (R = SI, AL, ZR) SUBOXIDE SUPERLATTICES СтатьяZatsepin A.F., Buntov E.A., Zatsepin D.A., Kurmaev E.Z., Pustovarov V.A., Ershov A.V., Johnson N.W., Moewes A.Journal of Physics Condensed Matter. Том 31. 2019. 415301 с.
LUMINESCENCE OF AN OXONITRIDOBERYLLATE: A STUDY OF NARROW-BAND CYAN-EMITTING SR[BE6ON4]:EU2+ СтатьяStrobel P., Schnick W., De Boer T., Moewes A., Weiler V., Schmidt P.J.Chemistry of Materials. Том 30. 2018. С. 3122-3130
INTERCALATION-INDUCED EXFOLIATION AND THICKNESS-MODULATED ELECTRONIC STRUCTURE OF A LAYERED TERNARY VANADIUM OXIDE СтатьяAndrews J.L., De Jesus L.R., Marley P.M., Banerjee S., Tolhurst T.M., Moewes A.Chemistry of Materials. Том 29. 2017. С. 3285-3294
BULK VS. SURFACE STRUCTURE OF 3D METAL IMPURITIES IN TOPOLOGICAL INSULATOR BI2TE3 СтатьяLeedahl B., Moewes A., Boukhvalov D.W., Kurmaev E.Z., Kukharenko A., Zhidkov I.S., Cholakh S.O., Gavrilov N.V., Le P.H., Luo C.W.Scientific Reports. Том 7. 2017. 5758 с.
DESIGNING LUMINESCENT MATERIALS AND BAND GAPS: A SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY STUDY OF LI2CA2[MG2SI2N6]:EU2+ AND BA[LI2(AL2SI2)N6]:EU2+ СтатьяTolhurst T.M., Moewes A., Strobel P., Schnick W., Schmidt P.J.Журнал физической химии С. Том 121. 2017. С. 14296-14301
HOW FUNCTIONAL GROUPS CHANGE THE ELECTRONIC STRUCTURE OF GRAPHDIYNE: THEORY AND EXPERIMENT СтатьяKetabi N., Tolhurst T.M., Leedahl B., Moewes A., Liu H., Li Y.Carbon. Том 123. 2017. С. 1-6
X-RAY SPECTROSCOPIC STUDY OF AMORPHOUS AND POLYCRYSTALLINE PBO FILMS, Α-PBO, AND Β-PBO FOR DIRECT CONVERSION IMAGING СтатьяQamar A., Leblanc K., Moewes A., Semeniuk O., Reznik A., Lin J., Pan Y.Scientific Reports. Том 7. 2017. 13159 с.
TUNABILITY OF ROOM-TEMPERATURE FERROMAGNETISM IN SPINTRONIC SEMICONDUCTORS THROUGH NONMAGNETIC ATOMS СтатьяLeedahl B., Abooalizadeh Z., Leblanc K., Moewes A.Physical Review B . Том 96. 2017. 045202 с.
STRUCTURE-INDUCED SWITCHING OF THE BAND GAP, CHARGE ORDER, AND CORRELATION STRENGTH IN TERNARY VANADIUM OXIDE BRONZES СтатьяTolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Marley P.M., Banerjee S.Chemistry - A European Journal. Том 23. 2017. С. 9846-9856
THE ELECTRONIC STRUCTURE OF Ε′-V2O5: AN EXPANDED BAND GAP IN A DOUBLE-LAYERED POLYMORPH WITH INCREASED INTERLAYER SEPARATION СтатьяTolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Banerjee S.Journal of Materials Chemistry A. Том 5. 2017. С. 23694-23703
STABILITY AND ELECTRONIC CHARACTERISTICS OF EPITAXIAL SILICENE MULTILAYERS ON AG(111) СтатьяJohnson N.W., Moewes A., Muir D., Kurmaev E.Z.Advanced Functional Materials. Том 25. 2015. С. 4083-4090
ELECTRONIC STRUCTURE AND SPIN TRAPPING IN LIMNAS AND LIFEAS:MN СтатьяMcleod J.A., Perez I., Green R.J., Moewes A., Kurmaev E.Z., Xing L.Y., Wang X.C., Jin C.Q.Journal of Physics Condensed Matter. Том 27. 2015. 015504 с.
ELECTRONIC STRUCTURE OF LI2 RUO3 STUDIED BY LDA AND LDA+DMFT CALCULATIONS AND SOFT X-RAY SPECTROSCOPY СтатьяPchelkina Z.V., Kurmaev E.Z., Streltsov S.V., Pitman A.L., Moewes A., Tan T.Y., Peets D.C., Park J.G.Physical Review B: Condensed Matter and Materials Physics (с 1998 по 2015 год). Том 91. 2015. 115138 с.
BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN2 DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY СтатьяDe Boer T., Boyko T.D., Moewes A., Braun C., Schnick W.Physica Status Solidi. Rapid Research Letters. Том 9. 2015. С. 250-254