Moewes A. - Список публикаций

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INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR_2−XBA_X[BEAL₃N₅]:EU²⁺ (X=0–2)

Статья

Elzer E., Schnick W., Strobel P., Weiler V., Schmidt P.J., Amin M.R., Moewes A.

Chemistry - A European Journal. Том 28. 2022. e202104121 с.

BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP₃N₆: EXPERIMENT AND THEORY

Статья

De Boer T., Fattah M.F.A., Amin M.R., Moewes A., Ambach S.J., Vogel S., Schnick W.

Journal of Materials Chemistry C. Том 10. 2022. С. 6429-6434

ENERGY LEVELS OF EU²⁺ STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI₂AL₂O₂N₂:EU²⁺

Статья

Amin M.R., Moewes A., Strobel P., Schmidt P.J., Schnick W.

Journal of Materials Chemistry C. 2022.

ELECTRONIC PROPERTIES OF CARBYNE CHAINS: EXPERIMENT AND THEORY

Статья

De Boer T., Moewes A., Zatsepin D., Raikov D., Kurmaev E., Zatsepin A.F.

Журнал физической химии С. Том 125. 2021. С. 8268-8273

UNRAVELING THE ENERGY LEVELS OF EU²⁺IONS INMBE₂₀N₁₄:EU²⁺(M= SR, BA) PHOSPHORS

Статья

Amin M.R., Moewes A., Elzer E., Schnick W.

Журнал физической химии С. Том 125. 2021. С. 11828-11837

TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR_{3- X}(N_{1- X}O_X)₄

Статья

Boyko T.D., Zerr A., Moewes A.

ACS Applied Electronic Materials. Том 3. 2021. С. 4768-4773

COMPREHENSIVE BAND GAP AND ELECTRONIC STRUCTURE INVESTIGATIONS OF THE PROMINENT PHOSPHORS M₂SI₅N₈:EU²⁺(M = CA, SR, BA) DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY

Статья

Tolhurst T.M., Moewes A., Braun C., Schnick W.

Журнал физической химии С. Том 125. 2021. С. 25799-25806

DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN₂

Статья

De Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D.

Журнал физической химии С. Том 125. 2021. С. 27959-27965

DIRECT EVIDENCE OF CHARGE TRANSFER UPON ANION INTERCALATION IN GRAPHITE CATHODES THROUGH NEW ELECTRONIC STATES: AN EXPERIMENTAL AND THEORETICAL STUDY OF HEXAFLUOROPHOSPHATE

Статья

De Boer T., Moewes A., Lapping J.G., Cabana J., Read J.A., Fister T.T., Balasubramanian M.

Chemistry of Materials. Том 32. 2020. С. 2036-2043

ORIGIN AND CONTROL OF ROOM TEMPERATURE FERROMAGNETISM IN CO,ZN-DOPED SNO₂: OXYGEN VACANCIES AND THEIR LOCAL ENVIRONMENT

Статья

Ho J., De Boer T., Braun P.M., Leedahl B., Moewes A., Manikandan D., Murugan R.

Journal of Materials Chemistry C. Том 8. 2020. С. 4902-4908

ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG₂PN₃AND ZN₂PN₃: EXPERIMENT AND THEORY

Статья

Al Fattah M.F., Kasap S., Amin M.R., Moewes A., Mallmann M., Schnick W.

Journal of Physics Condensed Matter. Том 32. 2020. 405504 с.

UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU²⁺-DOPED WIDE BANDGAP PHOSPHORS

Статья

Amin M.R., Qamar A., Moewes A., Strobel P., Giftthaler T., Schnick W.

Advanced Optical Materials. Том 8. 2020. 2000504 с.

OXYGEN VACANCY INDUCED STRUCTURAL DISTORTIONS IN BLACK TITANIA: A UNIQUE APPROACH USING SOFT X-RAY EXAFS AT THE O–K EDGE

Статья

Leedahl B., De Boer T., Moewes A., Yuan X.

Chemistry - A European Journal. Том 25. 2019. С. 3272-3278

BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY

Статья

Amin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R.

Журнал физической химии С. Том 123. 2019. С. 8943-8950

FUNDAMENTAL CRYSTAL FIELD EXCITATIONS IN MAGNETIC SEMICONDUCTOR SNO₂: MN, FE, CO, NI

Статья

Leedahl B., Mccloskey D.J., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.

Physical Chemistry Chemical Physics. Том 21. 2019. С. 11992-11998

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Другие авторы

Amin M.R.

Записей: 7

Гусев А.А.

Записей: 19