INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR<SUB>2−X</SUB>BA<SUB>X</SUB>[BEAL<SUB>3</SUB>N<SUB>5</SUB>]:EU<SUP>2+</SUP> (X=0–2) СтатьяElzer E., Schnick W., Strobel P., Weiler V., Schmidt P.J., Amin M.R., Moewes A.Chemistry - A European Journal. Том 28. 2022. e202104121 с.
BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP<SUB>3</SUB>N<SUB>6</SUB>: EXPERIMENT AND THEORY СтатьяDe Boer T., Fattah M.F.A., Amin M.R., Moewes A., Ambach S.J., Vogel S., Schnick W.Journal of Materials Chemistry C. Том 10. 2022. С. 6429-6434
ENERGY LEVELS OF EU<SUP>2+</SUP> STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI<SUB>2</SUB>AL<SUB>2</SUB>O<SUB>2</SUB>N<SUB>2</SUB>:EU<SUP>2+</SUP> СтатьяAmin M.R., Moewes A., Strobel P., Schmidt P.J., Schnick W.Journal of Materials Chemistry C. 2022.
TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR<SUB>3- X</SUB>(N<SUB>1- X</SUB>O<SUB>X</SUB>)<SUB>4</SUB> СтатьяBoyko T.D., Zerr A., Moewes A.ACS Applied Electronic Materials. Том 3. 2021. С. 4768-4773
UNRAVELING THE ENERGY LEVELS OF EU<SUP>2+</SUP>IONS INMBE<SUB>20</SUB>N<SUB>14</SUB>:EU<SUP>2+</SUP>(M= SR, BA) PHOSPHORS СтатьяAmin M.R., Moewes A., Elzer E., Schnick W.Журнал физической химии С. Том 125. 2021. С. 11828-11837
DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN<SUB>2</SUB> СтатьяDe Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D.Журнал физической химии С. Том 125. 2021. С. 27959-27965
ELECTRONIC PROPERTIES OF CARBYNE CHAINS: EXPERIMENT AND THEORY СтатьяDe Boer T., Moewes A., Zatsepin D., Raikov D., Kurmaev E., Zatsepin A.F.Журнал физической химии С. Том 125. 2021. С. 8268-8273
COMPREHENSIVE BAND GAP AND ELECTRONIC STRUCTURE INVESTIGATIONS OF THE PROMINENT PHOSPHORS M<SUB>2</SUB>SI<SUB>5</SUB>N<SUB>8</SUB>:EU<SUP>2+</SUP>(M = CA, SR, BA) DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY СтатьяTolhurst T.M., Moewes A., Braun C., Schnick W.Журнал физической химии С. Том 125. 2021. С. 25799-25806
ORIGIN AND CONTROL OF ROOM TEMPERATURE FERROMAGNETISM IN CO,ZN-DOPED SNO<SUB>2</SUB>: OXYGEN VACANCIES AND THEIR LOCAL ENVIRONMENT СтатьяHo J., De Boer T., Braun P.M., Leedahl B., Moewes A., Manikandan D., Murugan R.Journal of Materials Chemistry C. Том 8. 2020. С. 4902-4908
ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG<SUB>2</SUB>PN<SUB>3</SUB>AND ZN<SUB>2</SUB>PN<SUB>3</SUB>: EXPERIMENT AND THEORY СтатьяAl Fattah M.F., Kasap S., Amin M.R., Moewes A., Mallmann M., Schnick W.Journal of Physics Condensed Matter. Том 32. 2020. 405504 с.
DIRECT EVIDENCE OF CHARGE TRANSFER UPON ANION INTERCALATION IN GRAPHITE CATHODES THROUGH NEW ELECTRONIC STATES: AN EXPERIMENTAL AND THEORETICAL STUDY OF HEXAFLUOROPHOSPHATE СтатьяDe Boer T., Moewes A., Lapping J.G., Cabana J., Read J.A., Fister T.T., Balasubramanian M.Chemistry of Materials. Том 32. 2020. С. 2036-2043
UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU<SUP>2+</SUP>-DOPED WIDE BANDGAP PHOSPHORS СтатьяAmin M.R., Qamar A., Moewes A., Strobel P., Giftthaler T., Schnick W.Advanced Optical Materials. Том 8. 2020. 2000504 с.
ENERGY BAND GAPS AND EXCITED STATES IN SI QD/SIO<SUB>X</SUB>/R<SUB>Y </SUB>O<SUB>Z</SUB> (R = SI, AL, ZR) SUBOXIDE SUPERLATTICES СтатьяZatsepin A.F., Buntov E.A., Zatsepin D.A., Kurmaev E.Z., Pustovarov V.A., Ershov A.V., Johnson N.W., Moewes A.Journal of Physics Condensed Matter. Том 31. 2019. 415301 с.
FUNDAMENTAL CRYSTAL FIELD EXCITATIONS IN MAGNETIC SEMICONDUCTOR SNO<SUB>2</SUB>: MN, FE, CO, NI СтатьяLeedahl B., Mccloskey D.J., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.Physical Chemistry Chemical Physics. Том 21. 2019. С. 11992-11998
ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN<SUB>2</SUB>O<SUB>3</SUB> СтатьяHo J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.Journal of Materials Science: Materials in Electronics. Том 30. 2019. С. 14091-14098