Структурные особенности простых и сложных оксидов в системе In-Ga-Zn-Sn-O

Выполнены исследования процессов формирования функциональных прозрачных cлоев на основе оксидных систем Zn-Sn-O и In-Ga-Zn-Sn-O. Изучено влияние легирования оловом на аморфизацию простых и многокомпонентных функциональных оксидов прозрачной электроники.

STRUCTURAL FEATURES OF SIMPLE AND COMPLEX OXIDES IN THE In-Ga-Zn-Sn-O SYSTEM

The processes of formation of functional transparent layers based on oxide systems Zn-Sn-O and In-Ga-Zn-Sn-O have been studied. The performed studies of the effect of Sn addition on the amorphization of ZnO thin films, as well as films based on a more complex In-Ga-Zn-O system, are of interest for the further development of transparent electronics.