Bulletin of Experimental Biology and Medicine.
New York Consultants BureauSpringer / Автономная некоммерческая организация Издательство Российской академии медицинских наук.
Vol. 118.
1994.
P. 1193-1195
It is shown that addition of Gd to the melt during liquid phase epitaxy growth of InGaAsSb layers greatly reduces contamination of the samples with residual donor impurities, such as sulfur and silicon. The effect is related to Gd gettering of these impurities in the melt. © 1994.