The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

It is shown that addition of Gd to the melt during liquid phase epitaxy growth of InGaAsSb layers greatly reduces contamination of the samples with residual donor impurities, such as sulfur and silicon. The effect is related to Gd gettering of these impurities in the melt. © 1994.

Authors
Dolginov L.M.1 , Tunitskaya I.V.1 , Polyakov A.Y.1 , Druzhinina L.V.1 , Vinogradova G.V.1 , Smirnov N.B.1 , Govorkov A.V.1 , Borodina O.M.1 , Kozhukhova E.A.1 , Balmashnov A.A.2 , Milnes A.G.3
Editors
-
Publisher
-
Number of issue
2
Language
English
Pages
147-150
Status
Published
Department
-
Number
-
Volume
251
Year
1994
Organizations
  • 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
  • 2 Russia Friendship University, Mikluho- Maklay str. 6, Moscow, 117198, Russian Federation
  • 3 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
Keywords
Gallium antimode; Indium arsenide; Semiconductors; Sulphur
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/934/