Journal of Physics: Conference Series.
Institute of Physics Publishing.
Vol. 1694.
2020.
Research of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation
The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure in the barrier region and to start the process of directed construction optimization of the devices based on AlGaAs/InGaAs/GaAs pHEMT with the aim of improving their noise characteristic. © Published under licence by IOP Publishing Ltd.
Authors
Tikhomirov V.G.1
,
Gudkov A.G.2
,
Agasieva S.V.
2,
3
,
Yankevich V.B.1
,
Popov M.K.1
,
Chizhikov S.V.
2
Conference proceedings
Publisher
Institute of Physics Publishing
Number of issue
1
Language
English
Status
Published
Number
012150
Volume
1695
Year
2020
Organizations
- 1 Saint-Petersburg State Electrotechnical University LETI, St. Petersburg, 197376, Russian Federation
- 2 Bauman Moscow State Technical University, Moscow, 105005, Russian Federation
- 3 Peoples' Friendship University of Russia, Moscow, 117198, Russian Federation
Keywords
Aluminum gallium arsenide; Drain current; Gallium compounds; Nanostructures; Photonics; AlGaAs/InGaAs/GaAs; Construction optimization; Impact model; Low noise; Microwave radiometry; Noise characteristic; PHEMT transistors; Optoelectronic devices
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IOP Conference Series: Materials Science and Engineering.
Institute of Physics Publishing.
Vol. 941.
2020.