Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10‒20 μm, electrical resistivity ρ = 0.92 Ω cm at T = 300 K, and bang gap Eg = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is Ra = 2.46 μm. © 2018, Pleiades Publishing, Ltd.

Editors
-
Publisher
-
Number of issue
1
Language
English
Pages
164-171
Status
Published
Department
-
Number
-
Volume
92
Year
2018
Organizations
  • 1 Institute of Biochemical Technology and Nanotechnology, RUDN University, Moscow, 117198, Russian Federation
Keywords
band gap; copper(I) sulfide; electrical resistivity; surface roughness; thin films
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/6954/