Surface magnetism of silicon [111](7×7) and [001](2×1) surfaces: Quantum-chemical approach

When discussing bare surfaces of silicon crystal, the concept of dangling bonds is widely used. The surface reconstruction is usually explained in terms of a tendency of the bonds to be saturated. However, the current microscopic calculations show that the availability of dangling bonds on the topmost silicon atoms is controversial enough. © 1999 CriMiCo.

Authors
Sheka E.F. 1 , Nikitina E.A. 1 , Aono M.2
Editors
-
Publisher
Institute of Electrical and Electronics Engineers Inc.
Number of issue
-
Language
English
Pages
-
Status
Published
Department
-
Link
-
Number
815245
Volume
-
Year
1999
Organizations
  • 1 Russian Peoples' Friendship University, Moscow, 117923, Russian Federation
  • 2 Institute of Chemical and Physical Research (RIKEN), Japan Department of Precision Science and Technology, Osaka University, Wako-shi, Osaka, Japan
Keywords
Quantum chemistry; Silicon; Quantum chemical approach; Silicon atoms; Silicon crystal; Surface magnetism; Dangling bonds
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/607/