Surface magnetism of silicon [111](7×7) and [001](2×1) surfaces: Quantum-chemical approach

When discussing bare surfaces of silicon crystal, the concept of dangling bonds is widely used. The surface reconstruction is usually explained in terms of a tendency of the bonds to be saturated. However, the current microscopic calculations show that the availability of dangling bonds on the topmost silicon atoms is controversial enough. © 1999 CriMiCo.

Authors
Sheka E.F. 1 , Nikitina E.A. 1 , Aono M.2
Conference proceedings
1999 9th International Crimean Microwave Conference: Microwave and Telecommunication Technology, CriMiCo 1999 - Conference Proceedings
Publisher
Institute of Electrical and Electronics Engineers Inc.
Language
English
Status
Published
DOI
10.1109/CRMICO.1999.815245
Number
815245
Year
1999
Organizations
  • 1 Russian Peoples' Friendship University, Moscow, 117923, Russian Federation
  • 2 Institute of Chemical and Physical Research (RIKEN), Japan Department of Precision Science and Technology, Osaka University, Wako-shi, Osaka, Japan
Keywords
Quantum chemistry; Silicon; Quantum chemical approach; Silicon atoms; Silicon crystal; Surface magnetism; Dangling bonds
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