Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation

The numerical impact modeling of some external effects on devices based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes in the heterostructure in the buffer region and to start the process of directed construction optimization of the devices based on AlGaN/GaN HEMT with the aim of improving their performances. © Published under licence by IOP Publishing Ltd.

Authors
Tikhomirov V.G.1, 2 , Gudkov A.G.3 , Agasieva S.V. 4, 5 , Dynaiev D.D.2 , Popov M.K.1 , Chizhikov S.V.3
Conference proceedings
Journal of Physics: Conference Series
Publisher
Institute of Physics Publishing
Number of issue
1
Language
English
Status
Published
DOI
10.1088/1742-6596/1410/1/012191
Number
012191
Volume
1410
Year
2019
Organizations
  • 1 Saint-Petersburg State Electrotechnical University LETI, St. Petersburg, 197376, Russian Federation
  • 2 Closed Joint Stock Company Svetlana-Electronpribor, St. Petersburg, 194156, Russian Federation
  • 3 Bauman Moscow State Technical University, Moscow, 105005, Russian Federation
  • 4 Peoples Friendship University of Russia, Moscow, 117198, Russian Federation
  • 5 Microwave Radiometry Global Excellence Ltd., Moscow, 115201, Russian Federation
Keywords
Aluminum gallium nitride; Drain current; High electron mobility transistors; III-V semiconductors; Nanostructures; Optoelectronic devices; Photonics; AlGaN/GaN HEMTs; AlGaN/GaN heterostructures; Buffer region; Construction optimization; Gan hemt transistors; Impact model; Gallium nitride
Date of creation
10.02.2020
Date of change
10.02.2020
Short link
https://repository.rudn.ru/en/records/article/record/56267/
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