Energy band gaps and excited states in Si QD/SiOx/Ry Oz (R = Si, Al, Zr) suboxide superlattices

Authors

Zatsepin A.F. ¹ , Buntov E.A. ¹ , Zatsepin D.A. ^1, ² , Kurmaev E.Z. ^1, ² , Pustovarov V.A. ¹ , Ershov A.V. ³ , Johnson N.W. ⁴ , Moewes A. ⁴

Journal

Issue number

Language

English

Pages

415301

State

Published

Volume

Year

2019

Organizations

¹ Institute of Physics and Technology|Ural Federal University
² M.N. Mikheev Institute of Metal Physics|Russian Academy of Sciences|Ural Branch
³ Lobachevsky State University of Nizhni Novgorod
⁴ Department of Physics and Engineering Physics|University of Saskatchewan

Cite

Article

Ho J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.

Journal of Materials Science: Materials in Electronics. Vol. 30. 2019. P.. 14091-14098

Article

Bahzad T.S.

ИННОВАЦИОННЫЙ ПОТЕНЦИАЛ РАЗВИТИЯ НАУКИ В СОВРЕМЕННОМ МИРЕ: ТЕХНОЛОГИИ, ИННОВАЦИИ, ДОСТИЖЕНИЯ. 2019. P.. 175-180

Energy band gaps and excited states in Si QD/SiO_x/R_yO_z (R = Si, Al, Zr) suboxide superlattices