Energy band gaps and excited states in Si QD/SiOx/Ry Oz (R = Si, Al, Zr) suboxide superlattices

Authors

Zatsepin A.F.¹ , Buntov E.A.¹ , Zatsepin D.A.^1, ² , Kurmaev E.Z.^1, ² , Pustovarov V.A.¹ , Ershov A.V.³ , Johnson N.W. ⁴ , Moewes A. ⁴

Journal

Journal of Physics Condensed Matter

Number of issue

Language

English

Pages

415301

Status

Published

Volume

Year

2019

Organizations

¹ Institute of Physics and Technology|Ural Federal University
² M.N. Mikheev Institute of Metal Physics|Russian Academy of Sciences|Ural Branch
³ Lobachevsky State University of Nizhni Novgorod
⁴ Department of Physics and Engineering Physics|University of Saskatchewan

Cite

ГОСТ MLA RIS BibTex

ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN2O3

Article

Ho J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.

Journal of Materials Science: Materials in Electronics. Springer New York LLC. Vol. 30. 2019. P. 14091-14098

THE CUSTOMER RESISTANCE FACING INNOVATION ACTIVITIES

Article

Bahzad T.S.

ИННОВАЦИОННЫЙ ПОТЕНЦИАЛ РАЗВИТИЯ НАУКИ В СОВРЕМЕННОМ МИРЕ: ТЕХНОЛОГИИ, ИННОВАЦИИ, ДОСТИЖЕНИЯ. Общество с ограниченной ответственностью "Научно-издательский центр "Вестник науки". 2019. P. 175-180

Energy band gaps and excited states in Si QD/SiO_x/R_yO_z (R = Si, Al, Zr) suboxide superlattices

Other records

ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN<SUB>2</SUB>O<SUB>3</SUB>

THE CUSTOMER RESISTANCE FACING INNOVATION ACTIVITIES