Electronic structure and structural defects in 3d-metal doped In2O3

Authors
Ho J. 1 , Becker J. 1 , Leedahl B. 1 , Boukhvalov D.W.2, 3 , Zhidkov I.S.4 , Kukharenko A.I.4 , Kurmaev E.Z.4, 5 , Cholakh S.O.4 , Gavrilov N.V. 6 , Brinzari V.I.7 , Moewes A. 1
Journal
Journal of Materials Science: Materials in Electronics
Publisher
Springer New York LLC
Number of issue
15
Language
English
Pages
14091-14098
Status
Published
Volume
30
Year
2019
Organizations
  • 1 Department of Physics and Engineering Physics|University of Saskatchewan
  • 2 College of Science|Institute of Materials Physics and Chemistry|Nanjing Forestry University
  • 3 Theoretical Physics and Applied Mathematics Department|Ural Federal University
  • 4 Institute of Physics and Technology|Ural Federal University
  • 5 M. N. Mikheev Institute of Metal Physics|Ural Branch of Russian Academy of Sciences
  • 6 Institute of Electrophysics|Ural Branch of Russian Academy of Sciences
  • 7 E. Pokatilov Laboratory of Physics and Engineering of Nanomaterials|Department of Theoretical Physics|Moldova State University
Date of creation
10.07.2024
Date of change
10.07.2024
Short link
https://repository.rudn.ru/en/records/article/record/151644/
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