Dimethyl 2-[23-oxo-22,24-diphenyl-8,11,14-trioxa-25-azatetracyclo-[19.3.1. 0<sup>2,7</sup>.0<sup>15,20</sup>]pentacosa-2,4,6,15(20),16,18-hexaen-25-yl]- but-2-enedioate

Anh, L.T.; Hieu, T.H.; Soldatenkov, A.T.; Soldatova, S.A.; Khrustalev, V.N.

Authors

Anh L.T. ¹ , Hieu T.H. ¹ , Soldatenkov A.T. ² , Soldatova S.A. ² , Khrustalev V.N. ³

Journal

Acta Crystallographica. Section E: Structure Reports Online

Publisher

John Wiley & Sons

Issue number

Language

English

Pages

o1386-o1387

State

Published

Volume

Year

2012

Organizations

¹ Department of Chemistry|Vietnam National University
² Organic Chemistry Department|Russian Peoples Friendship University
³ X-Ray Structural Centre|A.N. Nesmeyanov Institute of Organoelement Compounds|Russian Academy of Sciences

Cite

ГОСТ MLA RIS BibTex

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE₂AS₂

Article

Mcleod J.A., Green R.J., Boyko T.D., Moewes A., Buling A., Neumann M., Skorikov N.A., Kurmaev E.Z., Finkelstein L.D., Ni N., Thaler A., Budko S.L., Canfield P.C.

Journal of Physics Condensed Matter. Vol. 24. 2012. 215501 p..

BAND-GAP ENGINEERING IN TIO₂-BASED TERNARY OXIDES

Article

Mcleod J.A., Green R.J., Moewes A., Kurmaev E.Z., Kumada N., Belik A.A.

Physical Review B: Condensed Matter and Materials Physics (с 1998 по 2015 год). Vol. 85. 2012. 195201 p..

Dimethyl 2-[23-oxo-22,24-diphenyl-8,11,14-trioxa-25-azatetracyclo-[19.3.1. 0^2,7.0^15,20]pentacosa-2,4,6,15(20),16,18-hexaen-25-yl]- but-2-enedioate

Other records

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE₂AS₂

BAND-GAP ENGINEERING IN TIO₂-BASED TERNARY OXIDES

Dimethyl 2-[23-oxo-22,24-diphenyl-8,11,14-trioxa-25-azatetracyclo-[19.3.1. 02,7.015,20]pentacosa-2,4,6,15(20),16,18-hexaen-25-yl]- but-2-enedioate

Other records

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE2AS2

BAND-GAP ENGINEERING IN TIO2-BASED TERNARY OXIDES

Cite

Dimethyl 2-[23-oxo-22,24-diphenyl-8,11,14-trioxa-25-azatetracyclo-[19.3.1. 0^2,7.0^15,20]pentacosa-2,4,6,15(20),16,18-hexaen-25-yl]- but-2-enedioate

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE₂AS₂

BAND-GAP ENGINEERING IN TIO₂-BASED TERNARY OXIDES