Passivation of GaAs by atomic hydrogen flow produced by the crossed beams method

A new method of hydrogen passivation is described in which a flow of molecular hydrogen is passed through dense microwave plasma across a magnetic field. This magnetic field serves to protect the sample surface from being bombarded by charged particles. Hence the crossed beam (CB) method makes it possible to avoid plasma etching and heavy ion bombardment that are so detrimental for many semiconductor devices. The positive effect of CB treatment on n-GaAs Schottky diodes is described. The effect consists of shallow donor passivation and improvement of I-V characteristics.

Authors
Balmashnov A.A. 1 , Golovanivsky K.S. 1 , Omeljanovsky E.M.2 , Pakhomov A.V.2 , Polyakov A.Y.2
Editors
-
Publisher
-
Number of issue
3
Language
English
Pages
242-245
Status
Published
Department
-
Number
010
Volume
5
Year
1990
Organizations
  • 1 People's Friendship University, M Maklay st., 6, Moscow 117198, Russian Federation
  • 2 State Institute of Rare Metals, B Tolmatchevsky 5, Moscow 109017, Russian Federation
Keywords
Atomic Hydrogen; Crossed Beams Method; Hydrogen Passivation; Ion Bombardment; Molecular Hydrogen; Schottky Diodes; Hydrogen; Plasmas--Microwaves; Semiconductor Diodes; Semiconducting Gallium Arsenide
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/1124/