HIGH PRESSURE-LOW TEMPERATURE PHASE DIAGRAM OF BARIUM: SIMPLICITY VERSUS COMPLEXITY ArticleDesgreniers S., Tse J.S., Li Q., Ma Y., Matsuoka T., Ohishi Y.Applied Physics Letters. Vol. 107. 2015. 221908 p..
PRESSURE-INDUCED CHANGES IN THE ELECTRON DENSITY DISTRIBUTION IN Α -GE NEAR THE Α-Β TRANSITION ArticleLi R., Liu J., Bai L., Shen G., Tse J.S.Applied Physics Letters. Vol. 107. 2015. 072109 p..
PRESSURE INDUCED SPIN TRANSITION REVEALED BY IRON M2,3-EDGE SPECTROSCOPY ArticleNyrow A., Büning T., Mende K., Tolan M., Sternemann C., Tse J.S., Hiraoka N., Desgreniers S., Wilke M.Applied Physics Letters. Vol. 104. 2014. 262408 p..
THE ORIGIN OF THE RESISTANCE CHANGE IN GESBTE FILMS ArticleJang M.H., Cho M.H., Park S.J., Kurmaev E.Z., Finkelstein L.D., Chang G.S.Applied Physics Letters. Vol. 97. 2010. P.. 152113-3
ELECTRONIC STRUCTURE OF A POTENTIAL OPTICAL CRYSTAL Y BA3 B9 O18: EXPERIMENT AND THEORY ArticleZhang Z.H., He M., Wang X.F., Li Q., Yang J.Applied Physics Letters. Vol. 92. 2008. 171903 p..
BUFFER LAYER EFFECT ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF RUBRENE-BASED ORGANIC THIN-FILM TRANSISTORS ArticleSeo J.H., Park D.S., Cho S.W., Kim C.Y., Jang W.C., Whang C.N., Yoo K.-H., Chang G.S., Pedersen T., Moewes A., Chae K.H., Cho S.J.Applied Physics Letters. Vol. 89. 2006.
ANALYSIS OF OCTADECYLTRICHLOROSILANE TREATMENT OF ORGANIC THIN-FILM TRANSISTORS USING SOFT X-RAY FLUORESCENCE SPECTROSCOPY ArticleKang S.J., Yi Y., Kim C.Y., Whang C.N., Callcott T.A., Krochak K., Moewes A., Chang G.S.Applied Physics Letters. Vol. 86. 2005. P.. 1-3
COMPTON SCATTERING OF ELEMENTAL SILICON AT HIGH PRESSURE ArticleTse J.S., Klug D.D., Jiang D.T., Sternemann C., Volmer M., Huotari S., Hiraoka N., Honkimäki V., Hämäläinen K.Applied Physics Letters. Vol. 87. 2005. P.. 1-3
ANGULAR ROTATION OF MAGNETIC HYSTERESIS OF ION-IRRADIATED FERROMAGNETIC THIN FILMS ArticleChang G.S., Callcott T.A., Zhang G.P., Woods G.T., Kim S.H., Shin S.W., Jeong K., Whang C.N., Moewes A.Applied Physics Letters. Vol. 81. 2002. P.. 3016-3018