BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY ArticleAmin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R.Journal of Physical Chemistry C. Том 123. 2019. С. 8943-8950
ENERGY BAND GAPS AND EXCITED STATES IN SI QD/SIO<SUB>X</SUB>/R<SUB>Y </SUB>O<SUB>Z</SUB> (R = SI, AL, ZR) SUBOXIDE SUPERLATTICES ArticleZatsepin A.F., Buntov E.A., Zatsepin D.A., Kurmaev E.Z., Pustovarov V.A., Ershov A.V., Johnson N.W., Moewes A.Journal of Physics Condensed Matter. Том 31. 2019. 415301 с.
LUMINESCENCE OF AN OXONITRIDOBERYLLATE: A STUDY OF NARROW-BAND CYAN-EMITTING SR[BE<SUB>6</SUB>ON<SUB>4</SUB>]:EU<SUP>2+</SUP> ArticleStrobel P., Schnick W., De Boer T., Moewes A., Weiler V., Schmidt P.J.Chemistry of Materials. Том 30. 2018. С. 3122-3130
TUNABILITY OF ROOM-TEMPERATURE FERROMAGNETISM IN SPINTRONIC SEMICONDUCTORS THROUGH NONMAGNETIC ATOMS ArticleLeedahl B., Abooalizadeh Z., Leblanc K., Moewes A.Physical Review B . Том 96. 2017. 045202 с.
HOW FUNCTIONAL GROUPS CHANGE THE ELECTRONIC STRUCTURE OF GRAPHDIYNE: THEORY AND EXPERIMENT ArticleKetabi N., Tolhurst T.M., Leedahl B., Moewes A., Liu H., Li Y.Carbon. Том 123. 2017. С. 1-6
THE ELECTRONIC STRUCTURE OF Ε′-V<SUB>2</SUB>O<SUB>5</SUB>: AN EXPANDED BAND GAP IN A DOUBLE-LAYERED POLYMORPH WITH INCREASED INTERLAYER SEPARATION ArticleTolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Banerjee S.Journal of Materials Chemistry A. Том 5. 2017. С. 23694-23703
DESIGNING LUMINESCENT MATERIALS AND BAND GAPS: A SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY STUDY OF LI<SUB>2</SUB>CA<SUB>2</SUB>[MG<SUB>2</SUB>SI<SUB>2</SUB>N<SUB>6</SUB>]:EU<SUP>2+</SUP> AND BA[LI<SUB>2</SUB>(AL<SUB>2</SUB>SI<SUB>2</SUB>)N<SUB>6</SUB>]:EU<SUP>2+</SUP> ArticleTolhurst T.M., Moewes A., Strobel P., Schnick W., Schmidt P.J.Journal of Physical Chemistry C. Том 121. 2017. С. 14296-14301
INTERCALATION-INDUCED EXFOLIATION AND THICKNESS-MODULATED ELECTRONIC STRUCTURE OF A LAYERED TERNARY VANADIUM OXIDE ArticleAndrews J.L., De Jesus L.R., Marley P.M., Banerjee S., Tolhurst T.M., Moewes A.Chemistry of Materials. Том 29. 2017. С. 3285-3294
STRUCTURE-INDUCED SWITCHING OF THE BAND GAP, CHARGE ORDER, AND CORRELATION STRENGTH IN TERNARY VANADIUM OXIDE BRONZES ArticleTolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Marley P.M., Banerjee S.Chemistry - A European Journal. Том 23. 2017. С. 9846-9856
X-RAY SPECTROSCOPIC STUDY OF AMORPHOUS AND POLYCRYSTALLINE PBO FILMS, Α-PBO, AND Β-PBO FOR DIRECT CONVERSION IMAGING ArticleQamar A., Leblanc K., Moewes A., Semeniuk O., Reznik A., Lin J., Pan Y.Scientific Reports. Том 7. 2017. 13159 с.
BULK VS. SURFACE STRUCTURE OF 3D METAL IMPURITIES IN TOPOLOGICAL INSULATOR BI<SUB>2</SUB>TE<SUB>3</SUB> ArticleLeedahl B., Moewes A., Boukhvalov D.W., Kurmaev E.Z., Kukharenko A., Zhidkov I.S., Cholakh S.O., Gavrilov N.V., Le P.H., Luo C.W.Scientific Reports. Том 7. 2017. 5758 с.
STABILITY AND ELECTRONIC CHARACTERISTICS OF EPITAXIAL SILICENE MULTILAYERS ON AG(111) ArticleJohnson N.W., Moewes A., Muir D., Kurmaev E.Z.Advanced Functional Materials. Том 25. 2015. С. 4083-4090
ADJACENT FE-VACANCY INTERACTIONS AS THE ORIGIN OF ROOM TEMPERATURE FERROMAGNETISM IN (IN1-XFEX)2 O3 ArticleGreen R.J., Leedahl B., Mcleod J.A., Chang G.S., Moewes A., Regier T.Z., Xu X.H., Kurmaev E.Z.Physical Review Letters. Том 115. 2015. 167401 с.
INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL<SUB>3</SUB>N<SUB>4</SUB>]: EU<SUP>2+</SUP>-EXPERIMENT AND CALCULATIONS ArticleTolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W.Advanced Optical Materials. Том 3. 2015. С. 546-550
BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN<SUB>2</SUB> DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY ArticleDe Boer T., Boyko T.D., Moewes A., Braun C., Schnick W.Physica Status Solidi. Rapid Research Letters. Том 9. 2015. С. 250-254