Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb

Hydrogen passivation effects in InAs-related and GaSb-related InGaAsSb layers lattice matched to GaSb have been studied. Strong passivation of shallow acceptors has been observed and is explained by the assumption that hydrogen is a deep donor in these materials. The effects of the hydrogen treatment mode on the passivation efficiency are also discussed, as well as the changes induced by hydrogen treatment in photoluminescence spectra of the layers. © 1994.

Авторы
Polyakov A.Y.1 , Tunitskaya I.V.1 , Druzhinina L.V.1 , Govorkov A.V.1 , Smirnov N.B.1 , Kozhukhova E.A.1 , Borodina O.M.1 , Milnes A.G.2 , Li X.2 , Pearton S.J.3 , Balmashnov A.A.4
Журнал
Materials Science and Engineering B
Номер выпуска
2-3
Язык
Английский
Страницы
137-141
Статус
Опубликовано
Ссылка
Внешняя ссылка
DOI
10.1016/0921-5107(94)90134-1
Том
27
Год
1994
Организации
  • 1 Institute of Rare Metals, B. Tolmachevsky, Moscow, 109017, Russian Federation
  • 2 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 3 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
  • 4 Russian Friendship University, 6 Miklukho-Maklay St, Moscow, 117198, Russian Federation
Ключевые слова
Epitaxy of thin films; Gallium antimonide; Hydrogen; Indium arsenide
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/968/
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