High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900-920 nm

High-power hybrid semiconductor lasers-thyristors (λ = 900 - 920 nm) consisting of thyristor crystals soldered in series with an integrated semiconductor laser with three emitting sections are studied. A monolithic laser-thyristor with three emitting sections is used as a reference sample. The output power of the triple monolithically integrated laser-thyristor is ≈120 W at a turn-on voltage of 18 V. The turn-on voltage of a hybrid laser-thyristor with three emitting sections is 28 V, and the peak output power reaches ≈170 W. © 2021 Kvantovaya Elektronika and IOP Publishing Limited.

Авторы
Bagaev T.A. 1, 2 , Gul'Tikov N.V. 2 , Ladugin M.A. 2 , Marmalyuk A.A. 2 , Kurnyavko Yu.V. 2 , Krichevskii V.V. 2 , Morozyuk A.M. 2 , Konyaev V.P. 2 , Simakov V.A. 2 , Slipchenko S.O.3 , Podoskin A.A.3 , Pikhtin N.A.3 , Kazakova A.E.3 , Romanovich D.N.3 , Kryuchkov V.A.3
Журнал
Номер выпуска
10
Язык
Английский
Страницы
912-914
Статус
Опубликовано
Номер
10
Том
51
Год
2021
Организации
  • 1 JSC M.F. Stelmakh Polyus Research Institute, ul. Vvedenskogo 3, korp. 1, Moscow, 117342, Russian Federation
  • 2 Peoples' Friendship University of Russia, RUDN University, ul. Miklukho-Maklaya 6, Moscow, 117198, Russian Federation
  • 3 Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
Ключевые слова
Hybrid laser - thyristor; Integrated laser - thyristor; Output power
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