Stability of the Magnetic Subsystem of 2D Magnets within the Crystal Orbital Hamilton Population Method

The densities of electronic states in quasi-two-dimensional vanadium nitrides have been studied using density functional theory and the method of the crystal orbital Hamilton population. The contribution of various orbital pairs and their influence on the stability of the magnetic subsystem of these compounds have been analyzed using the crystal orbital Hamilton population (COHP) algorithm. The calculation results and their analysis suggest that the formation of long-range magnetic order plays a role in the structural stabilization of magnetic quasi-two-dimensional transition metal nitrides. Comparing COHP curves for different vanadium nitrides shows that the nitrogen stoichiometry in VxNy compounds affects the electronic properties and the nature of the chemical bond during the transition to the ferromagnetic state. Calculation data and total energies prove the structure-stabilizing effect of long-range magnetic ordering in quasi-two-dimensional vanadium–nitrogen compounds.

Авторы
Kushchuk L.I.1 , Veretimus D.K.1 , Lega P.V. 1, 2, 3 , Antonenkova A.Yu. 3 , Kartsev A.I. 1, 3, 4
Издательство
Pleiades Publishing, Ltd. (Плеадес Паблишинг, Лтд)
Номер выпуска
4
Язык
Английский
Страницы
859-863
Статус
Опубликовано
Том
18
Год
2024
Организации
  • 1 Bauman Moscow State Technical University, 105005, Moscow, Russia
  • 2 Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia
  • 3 RUDN University, 117198, Moscow, Russia
  • 4 Computing Center, Far Eastern Branch of the Russian Academy of Sciences, 680000, Khabarovsk, Russia
Дата создания
01.10.2024
Дата изменения
01.10.2024
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/157553/
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Основные тенденции и перспективы развития современной романской и германской филологии: электронный сборник научных трудов II Международной научно-практической конференции. Москва, 14-15 мая 2024 г.. Центр современных научных исследований и образовательных технологий. 2024. С. 446-455