Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors

The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2 μm × 100 μm aperture and a compact heterothyristor switch is demonstrated. The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V. The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W, and the turn-on delay between the elements of the composite aperture was 160 ps

Авторы
Slipchenko Sergey Olegovich1 , Podoskin Aleksandr Aleksandrovich1 , Shushkanov Ilia Vasil'evich1 , Rastegaeva Marina Gennad'evna1 , Rizaev Artem Eduardovich1 , Kondratov Matvey Igorevich1 , Grishin Artem Evgen'evich1 , Pikhtin Nikita Aleksandrovich1 , Bagaev Timur Anatol'evich 1, 2, 3 , Ladugin Maxim Anatol'evich2 , Marmalyuk Aleksandr Anatol'evich 2, 3 , Simakov Vladimir Aleksandrovich2
Журнал
Chinese Optics Letters
Издательство
Optica Publishing Group (formerly OSA)
Номер выпуска
7
Язык
Английский
Страницы
072501
Статус
Опубликовано
DOI
10.3788/COL202422.072501
Том
22
Год
2024
Организации
  • 1 Ioffe Institut, Russian Academy of Sciences, St. Petersburg 194021, Russia
  • 2 Open Joint-Stock Company M. F. Stel’makh Polyus Research Institute, Moscow 117342, Russia
  • 3 Российский университет дружбы народов
Дата создания
24.09.2024
Дата изменения
24.09.2024
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/157530/
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